Polishing methods for TEM specimen preparation compete with FIB methods with regard to relative simplicity, success rate, and the ability to produce site-specific specimens in a timely manner—until the site-specific target resolution for the most advanced semiconductor specimens dropped below 0.5 µm. Beyond this point only FIB methods can yield specimens with the required degree of specificity. A procedure for preparing SEM and TEM specimens utilizing a combination of polishing and FIB techniques is presented that capitalizes on the best elements of both methods and offers the immense advantage of reducing or eliminating most of the artifacts associated with the FIB technique. Utilizing this hybrid technique offers a path forward when the incorporation of extremely fragile components into near-future semiconductor devices renders the lift-out technique marginally useful.