The combination of field emission scanning electron microscopy (FESEM) and focused ion beam (FIB) is a future key technology for semiconductor and materials science related applications. Through the combination of the Gemini ultrahigh resolution field emission SEM column and the Canion31+ high performance FIB column a wide field of applications can be accessed. This includes structural cross-sections for SEM and transmission electron microscopy (TEM) applications, device modification, failure analysis, sublayer measurement and examination, as well as SEM and FIB related analytical techniques such as energy dispersive x-ray spectroscopy (EDS), wavelength dispersive x-ray spectroscopy (WDS), secondary ion mass spectrometry (SIMS) etc. Real time high resolution SEM imaging of the cutting and deposition process enables the researcher to perform very accurate three dimensional structural examinations and device modifications.