This thesis considers the noise performance of CMOS LC-VCOs. It is motivated by the challenges that the oscillator noise specification presents to designers of large mixed-mode systems. It treats this issue on a theoretical level and on a design level. On the theoretical level, this work presents an analytical method for examining the noise behaviour of fully-integrated, resonator-based VCOs. This is intended to give designers a more fundamental insight into the LC-oscillator's noise performance without the need for an exhaustive use of the simulator. In the analysis, the oscillator is distilled to its simplest dynamic model:​ a nonlinear second-order stochastic differential equation. Nonlinear expressions for common oscillator topologies are derived and integrated into the second-order model. A variety of intrinsic and extrinsic noise models are included as well. Asymptotic solution methods are combined with the correlation theory to produce closed-form expressions for the phase noise. These techniques readily account for a number of important properties including:​ state-dependent noise, positive feedback, AM-PM conversion, large phase deviations and noise modulation. The analysis is verified in simulation with SPECTRE and experimentally with integrated VCO measurements.

On the design level, this thesis considers methods of shielding oscillators from extrinsic noise. To this end, a fully-monolithic 2.4-GHz 0.18-mum CMOS LC-VCO with enhanced supply rejection is proposed and designed. Isolating the tank and switching core from the power and ground lines, the effect of supply disturbances on the VCO are reduced by 40 dB, more than a 30-dB improvement over other fully-monolithic LC-VCOs. Further, this scheme does not compromise the oscillator's tuning sensitivity, allowing a 1-GHz (38%) tuning range. At a power dissipation of 11 mW, the measured phase noise at 100-kHz offset from a 2.9-GHz carrier is -105 dBc/Hz. Also, recognizing that typical varactor designs make LC-oscillators susceptible to common-mode disturbances a new MOS-varactor structure capable of rejecting such noise is proposed. Simulation results indicate a 5-times improvement in common-mode noise rejection for the new structure.