As microelectronic device dimensions continue to scale to smaller sizes, metallization faces ever greater challenges arising from the degradation of step coverage, the increase in clectromigration, and the growing importance of the intrinsic microstructure of the metal films. In order to meet some of these challenges, a number of advanced metallization processes have been proposed involving optimized sputter distributions. bias sputtering, high temperature deposition, or metal chemical vapour deposition. Each of these processes has both advantages and limitations which must be better underst ood before it can be applied in a production environment.

In order to facilitate this understanding, this thesis presents the development of thin film growth simulation tools suitable for studying and optimizing several of the advanced metallization techniques. Specifically discussed are the development of the SIMSPUD simulation for predicting realistic sputter distributions and the extension of the SIMBAD model to ailoy sputtering, bias sputtering, high temperature deposition, and refractory metal chemical vapour deposition. Experimental verification of each of these models is presented along with examples of applications for each of the advanced metallization processes mentioned above.