Monolithic power integrated circuits (PICs) combining low power digital and/or analog control circuits and high power output drivers have proven to be cost effective in the implementation of power electronics systems. High current, high speed Schottky INjection Field Effect Transistors (SINFET) are prime candidates as PIC output drivers. Proper design and optimization of the SINFET is an important issue which is studied in this thesis. The behavior of the Schottky-barrier injector in the SINFET under high-level injection is studied, and a model useful in predicting and optimizing the DC characteristics of the SINFET is developed.

In current-sourcing applications, high preformance p-channel drivers are needed. The Schottky injection concept is extended for the first time to the design and fabrication of p-channel SINFETs. The reliability issue of Schottky-barrier injectors on p-type silicon is eliminated using a barrier-height-enhancement technique. The p-SINFETs fabricated are found to exhibit a significant improvement in current-handling capability over that of the LDMOST while maintaining comparable switching speed. The accuracy of the Schottky-barrier diode and SINFET models developed are verified by direct comparison with experimental results.

A CMOS-compatible complementary SINFET process is implemented to demonstrate the feasibility of combining n- and p-channel SINFETs into a simple and economical process. Higher current-handling capability with greater circuit-design flexibility is made possible through this process.